无锡固电ISC 供应2SD1789三*管

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ITO-220供应2SD1789三*管有意者请联系!

D*CRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(_SUS₎= 200V (Min.)

·High Switching Speed

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed high current switching industrial use.

*SYOL**	PARAMETER	VALUE	UNIT
V_CEO	Collector-Emitter Voltage	200	V
V_CBO	Collector-Base Voltage	200	V
V_EBO	Emitter-Base Voltage	7	V
I_C	Collector Current-Continunous	4	A
I_CM	Collector Current-Peak	6	A
I_B	Base Current-Continunous	0.3	A
I_BM	Base Current-Peak	0.5	A
P_C	Collector Power Dissipation @T_C=25℃	25	W
T_j	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 50mA; I_B= 0	200			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 1A; I_B= 2mA			1.5	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 1A; I_B= 2mA			2.0	V
I_CBO	Collector Cutoff Current	V_CB= 200V; I_E= 0			0.1	mA
I_CEO	Collector Cutoff Current	V_CE= 200V; I_B= 0			0.1	mA
I_EBO	Emitter Cutoff Current	V_EB= 7V; I_C= 0			5	mA
h_FE	DC Current Gain	I_C= 1A, V_CE= 3V	1500		30000
f_T	Current-Gain—Bandwidth Product	I_C= 0.4A ; V_CE= 10V		20		MHz
Switching Times; Resistive Load
t_on	Turn-On Time	I_C= 1A;I_B1= -I_B2= 2mA V_BB2= 4V; R_L= 25Ω			2	μs
t_s	Storage Time				12	μs
t_f	Fall Time				5	μs