无锡固电ISC供应2*1287

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D*CRIPTION

·High DC Current Gain-

:h_FE= 1000(Min)@I_C= -1A

·Collector-Emitter Breakdown Voltage-

:V_(BR)CEO= -100V(Min)

·Low Collector-Emitter Saturation Voltage

:V_CE(sat)= -1.5V(Max)@ I_C= -1A

·Complement to T*e 2SD1765

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-100	V
V_CEO	Collector-Emitter Voltage	-100	V
V_EBO	Emitter-Base Voltage	-8	V
I_C	Collector Current-Continuous	-2	A
I_CM	Collector Current-Peak	-3	A
P_C	Collector Power Dissipation T_a=25℃	2	W
P_C	Collector Power Dissipation T_C=25℃	20	W
T_j	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= -5mA, I_B= 0	-100			V
V_(BR)CBO	Collector-Base Breakdown Voltage	I_C= -50μA, I_E= 0	-100			V
V_CE(_sat₎	Collector-Emitter Saturation Voltage	I_C= -1A; I_B= -1mA			-1.5	V
I_CBO	Collector Cutoff Current	V_CB= -100V; I_E= 0			-10	μA
I_EBO	Emitter Cutoff Current	V_EB= -7V; I_C= 0			-3	mA
h_FE	DC Current Gain	I_C= -1A; V_CE= -2V	1000		10000
C_OB	Output Capacitance	I_E= 0; V_CB= -10V; f= 1MHz		35		pF