无锡固电ISC 达林顿三*管 MJ15003

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D*CRIPTION

·High DC Current Gain-

: h_FE= 25(Min)@I_C= 5A

·Wide Area of Safe Operation

·Complement to T*e MJ15004

APPLICATIONS

·Designed for high power audio,disk head positioners and

other linear applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	140	V
V_CEO	Collector-Emitter Voltage	140	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current-Continuous	20	A
I_B	Base Current-Continuous	5	A
I_E	Emitter Current-Continuous	-25	A
P_D	Total Power Dissipation@T_C=25℃	250	W
T_j	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

ELE*RICAL CHARA*ERISTICS

Tj=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 0.2A ;I_B= 0	140		V
V_CE(sat)	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 0.5A		1	V
V_BE(on)	Base-Emitter On Voltage	I_C= 5A ; V_CE= 2V		2	V
I_CEO	Collector Cutoff Current	V_CE= 140V; I_B= 0		0.25	mA
I_CEX	Collector Cutoff Current	V_CE= 140V; V_BE(OFF)= 1.5V V_CE= 140V; V_BE(OFF)= 1.5V;T_C= 150℃		0.1 2.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 5V; I_C= 0		0.1	mA
h_FE	DC Current Gain	I_C= 5A ; V_CE= 2V	25	150
I_s/b	Second Breakdown Collector Current with Base Forward Biased	V_CE= 50V,t= 1s, Nonrepetitive	5		A
I_s/b	Second Breakdown Collector Current with Base Forward Biased	V_CE= 100V,t= 1s, Nonrepetitive	1		A
C_OB	Output Capacitance	I_E= 0 ; V_CB= 10V;f_test= 1.0MHz		1000	pF
f_T	Current-Gain—Bandwidth Product	I_C= 0.5A ; V_CE= 10V;f_test= 0.5MHz	2		MHz