是
ISC
BDT88
放大
硅(Si)
PNP型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
·DC Current Gain -hFE= 40(Min)@IC= -5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)- BDT82; -80V(Min)- BDT84;
-100V(Min)- BDT86; -120V(Min)- BDT88
·Complement to T*eBDT81/83/85/87
APPLICATIONS
·Designed for use in audio output stages and general amplifer
andswitching applications
SY*OL | PARAMETER | VALUE | UNIT | |
VCBO | Collector-Base Voltage | BDT82 | -60 | V |
BDT84 | -80 | |||
BDT86 | -100 | |||
BDT88 | -120 | |||
VCEO | Collector-Emitter Voltage | BDT82 | -60 | V |
BDT84 | -80 | |||
BDT86 | -100 | |||
BDT88 | -120 | |||
VEBO | Emitter-Base Voltage | -7 | V | |
IC | Collector Current-Continuous | -15 | A | |
ICM | Collector Current-Peak | -20 | A | |
IB | Base Current | -4 | A | |
PC | Collector Power Dissipation TC=25℃ | 125 | W | |
Tj | Junction Temperature | 150 | ℃ | |
Tstg | StorageTemperature Range | -65~150 | ℃ |
THERMAL CHARA*ERISTICS
SY*OL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1 | ℃/W |
Rth j-a | Thermal Resistance,Junction to Ambient | 70 | ℃/W |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | BDT82 | IC= -30mA; IB= 0 | -60 |
|
| V |
BDT84 | -80 | ||||||
BDT86 | -100 | ||||||
BDT88 | -120 | ||||||
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -1.0 | V | |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -7A; IB= -0.7A |
|
| -1.6 | V | |
VBE(on) | Base-Emitter On Voltage | IC= -5A ; VCE= -4V |
|
| -1.5 | V | |
IC* | Collector Cutoff Current | VCE= 0.8VCBOmax; VBE= 0 |
|
| -1 | mA | |
ICBO | Collector Cutoff Current | VCB= VCBOmax; IE= 0 |
|
| -0.2 | mA | |
IEBO | Emitter Cutoff Current | VEB= -7V; IC= 0 |
|
| -0.1 | mA | |
hFE-1 | DC Current Gain | IC= -50mA ; VCE= -10V | 40 |
|
|
| |
hFE-2 | DC Current Gain | IC= -5A ; VCE= -4V | 40 |
|
| ||
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -10V |
| 20 |
| MHz | |
Switching Times | |||||||
ton | Turn-On Time | IC= -7A; IB1= -IB2= -0.7A |
|
| 1 | μs | |
toff | Turn-Off Time |
|
| 2 | μs |
友情链接: 深圳市元东发电子有限公司