无锡固电ISC供应2691三管

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D*CRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -80V(Min)

·Good Linearity of h_FE

·Wide Area of Safe Operation

·Complement to T*e 2SD727

APPLICATIONS

·Designed for low frequency power amplifier and power

switching applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-130	V
V_CEO	Collector-Emitter Voltage	-80	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-5	A
P_C	Collector Power Dissipation @ T_C=25℃	60	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= -30mA; I_B= 0	-80			V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= -1mA; I_E= 0	-130			V
V_(BR)EBO	Emitter-BaseBreakdownVoltage	I_E= -1mA; I_C= 0	-5			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -3A; I_B= -0.3A			-1.5	V
V_BE_(on)	Base-Emitter On Voltage	I_C= -1A; V_CE= -5V			-1.5	V
I_CBO	Collector Cutoff Current	V_CB= -130V; I_E=0			-100	μA
I_EBO	Emitter Cutoff Current	V_EB= -5V; I_C=0			-100	μA
h_FE-1	DC Current Gain	I_C= -1A; V_CE= -5V	40		200
h_FE-2	DC Current Gain	I_C= -3A; V_CE= -5V	20
C_OB	Output Capacitance	I_E=0; V_CB= -10V; f_test= 1.0MHz		190		pF
f_T	Current-Gain—Bandwidth Product	I_C=-1A; V_CE= -5V		7		MHz