是
ISC
2S*064
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.35V(Max)@ IC=6A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min)
·Complement to T*e 2SA1567
APPLICATIONS
·Designed for use in DC motor driver and general
purpose applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 50 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 12 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 35 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT | |||
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 25mA ; IB= 0 | 50 |
|
| V | |||
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 0.3A |
|
| 0.35 | V | |||
ICBO | Collector Cutoff Current | VCB=50V; IE= 0 |
|
| 100 | μA | |||
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA | |||
hFE | DC Current Gain | IC= 6A ; VCE= 1V | 50 |
|
|
| |||
fT | Current-Gain—Bandwidth Product | IE= -0.5A ; VCE= 12V | 40 |
| MHz | ||||
COB | Output Capacitance | IE= 0 ; VCB= 12V;ftest= 1.0MHz |
| 180 |
| pF | |||
Switching times | |||||||||
ton | Turn-on Time | IC= 6A ; IB1= -IB2= 0.12A RL= 4Ω;VCC= 24V |
| 0.6 |
| μs | |||
tstg | Storage Time |
| 1.4 |
| μs | ||||
tf | Fall Time |
| 0.4 |
| μs | ||||
友情链接： 深圳市元东发电子有限公司
