是
ISC
2SA753
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.)
·Complement to T*e 2SC1343
APPLICATIONS
·Designed for 100W audio amplifier power output applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -140 | V |
VCEO | Collector-Emitter Voltage | -110 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -10 | A |
IC | Collector Current-Peak | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA; RBE=∞ | -110 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -5mA; IE= 0 | -140 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -5mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -1A |
|
| -1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -1A; VCE= -5V |
|
| -1.5 | V |
ICBO | Collector Cutoff Current | VCB= -30V; IE= 0 |
|
| -1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -5V | 30 |
| 200 |
|
hFE-2 | DC Current Gain | IC= -10A; VCE= -5V | 15 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= -1A; VCE= -5V |
| 20 |
| MHz |
u hFE-1Cl*ifications
A | B | C |
30-60 | 50-120 | 100-200 |
友情链接: 深圳市元东发电子有限公司