2SC3850 无锡固电ISC供应三*管

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D*CRIPTION

·High Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)

·Good Linearity of h_FE

·High Collector Current

APPLICATIONS

·Designed for power switching and general purpose

applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	500	V
V_C*	Collector-Emitter Voltage	500	V
V_CEO	Collector-Emitter Voltage	400	V
V_EBO	Emitter-Base voltage	7	V
I_C	Collector Current-Continuous	20	A
I_CM	Collector Current-Peak	30	A
I_B	Base Current-Continuous	6	A
P_C	Collector Power Dissipation @ T_C=25℃	125	W
P_C	Collector Power Dissipation @ T_a=25℃	2.5	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 0.5A; L= 25mH	400			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 10A; I_B= 2A			1.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 10A; I_B= 2A			1.5	V
I_CBO	Collector Cutoff Current	V_CB= 500V ; I_E= 0			100	μA
I_EBO	Emitter Cutoff Current	V_EB= 7V; I_C= 0			100	μA
h_FE-1	DC Current Gain	I_C= 2A ; V_CE= 5V	15
h_FE-2	DC Current Gain	I_C= 10A ; V_CE= 5V	10
f_T	Current-Gain—Bandwidth Product	I_C= 1A ; V_CE= 10V; f= 1MHz		15		MHz
Switching Times
t_on	Turn-on Time	I_C= 10A, I_B1= -I_B2= 2A; V_CC= 125V			1.0	μs
t_stg	Storage Time				2.5	μs
t_f	Fall Time				1.0	μs