无锡固电ISC供应2S151三管

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D*CRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 40V(Min)

·Collector Current-I_C=15A(Max.)

·Low Collector Saturation Voltage

:V_CE(sat)= 0.3V(Max.)@ I_C=7.5A

APPLICATIONS

·Designed for use in drivers such as DC/DC converters

and actuators.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	60	V
V_CEO	Collector-Emitter Voltage	40	V
V_EBO	Emitter-Base Voltage	7	V
I_C	Collector Current-Continuous	15	A
I_CM	Collector Current-Peak	30	A
I_B	Base Current-Continuous	2	A
I_BM	Base Current-Peak	3	A
P_T	Total Power Dissipation @ T_C=25℃	30	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 0.1A; I_B= 0	40			V
V_CE(_sat₎	Collector-Emitter Saturation Voltage	I_C= 7.5A; I_B= 0.4A			0.3	V
V_BE(_sat₎	Base-Emitter Saturation Voltage	I_C= 7.5A; I_B= 0.4A			1.2	V
I_CBO	Collector Cutoff Current	At rated Voltage			100	μA
I_CEO	Collector Cutoff Current	At rated Voltage			100	μA
I_EBO	Emitter Cutoff Current	At rated Voltage			100	μA
h_FE	DC Current Gain	I_C= 7.5A ; V_CE= 2V	70
f_T	Current-Gain—Bandwidth Product	I_C= 1.5A ; V_CE= 10V		50		MHz
Switching times
t_on	Turn-on Time	I_C= 7.5A, I_B1= 0.75A; I_B2= -0.75A; R_L= 4Ω; V_BB2= 4V			0.3	μs
t_stg	Storage Time				1.5	μs
t_f	Fall Time				0.5	μs