无锡固电ISC供应2SD1577三*管

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D*CRIPTION

·High Breakdown Voltage-

: V_CBO= 1500V (Min)

·High Switching Speed

·High Reliability

·Wide Area of Safe Operation

APPLICATIONS

·Designed for horizontaloutput applications

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	1500	V
V_C*	Collector-Emitter Voltage	1500	V
V_CEO	Collector-Emitter Voltage	700	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current- Continuous	5	A
I_CP	CollectorCurrent-Peak	17	A
I_BP	BaseCurrent-Peak	3.5	A
I_BP	Reverse Base Current-Peak	-2.5	A
P_C	Collector Power Dissipation @ T_a=25℃	3	W
P_C	Collector Power Dissipation @ T_C=25℃	100	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_E= 1mA ; I_C= 0	6			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 4.5A; I_B= 2A			2.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 4.5A; I_B= 2A			1.3	V
I_CBO	Collector Cutoff Current	V_CB= 750V ; I_E= 0			50	μA
I_CBO	Collector Cutoff Current	V_CB= 1500V ; I_E= 0			1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 6V ; I_C= 0			1.0	mA
h_FE	DC Current Gain	I_C= 4A ; V_CE= 10V	4		15
f_T	Current-Gain—Bandwidth Product	I_C= 0.5A ; V_CE= 10V, f_test= 0.5MHz		2		MHz
Switching times
t_stg	Storage Time	I_C= 4A , I_B1(_end₎= 1.5A ; L_B= 10μH			11	μs
t_f	Fall Time	I_C= 4A , I_B1(_end₎= 1.5A ; L_B= 10μH			1.0	μs