SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

500

V

V_CEO

Collector-Emitter Voltage                        

400

V

V_EBO

Emitter-Base voltage

10

V

I_C

Collector Current-Continuous

18

A

I_CM

Collector Current-Peak

36

A

I_B

Base Current-Continuous

6

A

P_C

Collector Power Dissipation

@ T_C=25℃

130

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA ; I_B= 0

400

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 10A; I_B= 2A

0.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 10A; I_B= 2A

1.3

V

I_CBO

Collector Cutoff Current

V_CB= 500V ; I_E= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 10A ; V_CE= 4V

10

30

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V; f_test=1.0MHz

165

pF

f_T

Current-Gain—Bandwidth Product

I_E= -2A ; V_CE= 12V

10

MHz

Switching Times

t_on

Turn-on Time

I_C= 10A,I_B1= 1A; I_B2= -2A

R_L= 20Ω; V_CC= 200V

1.0

μs

t_stg

Storage Time

3.0

μs

t_f

Fall Time

0.5

μs