无锡固电ISC供应三极管2SD1063

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DESCRIPTION

·Low Collector Saturation Voltage

: V_CE(sat)= 0.4V(Max)@ I_C= 4A

·Wide Area of Safe Operation

·Complement to Type 2SB827

APPLICATIONS

·Designed for universal high current switching as solenoid

driving, high speed inverter and converter applications.

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	60	V
V_CEO	Collector-Emitter Voltage	50	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	7	A
I_CP	Collector Current-Pulse	14	A
P_C	Collector Power Dissipation @ T_C=25℃	60	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.		MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= 1mA ; R_BE=∞	50				V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= 1mA ; I_E= 0	60				V
V_(BR)EBO	Emitter-BaseBreakdownVoltage	I_E= 1mA ; I_C= 0	6				V
V_CE(_sat₎	Collector-Emitter Saturation Voltage	I_C= 4A; I_B= 0.4A				0.4	V
I_CBO	Collector Cutoff Current	V_CB= 40V; I_E= 0				100	μA
I_EBO	Emitter Cutoff Current	V_EB= 4V; I_C=0				100	μA
h_FE-1	DC Current Gain	I_C= 1A; V_CE= 2V	70			280
h_FE-2	DC Current Gain	I_C= 5A; V_CE= 2V	30
f_T	Current-Gain—Bandwidth Product	I_C= 1A; V_CE= 5V		10			MHz
Switching times
t_on	Turn-on Time	I_C= 2A; I_B1= -I_B2= 0.2A R_L= 10Ω;P_W=20μs; V_CC= 20V			0.2			μs
t_stg	Storage Time				0.9			μs
t_f	Fall Time				0.3			μs