是
ISC
2SD1545
功率
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Color TV horizontal output applications
·Switching regulator output applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VCEO | Collector-Emitter Voltage | 600 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 5 | A |
IB | Base Current- Continuous | 2.5 | A |
PC | Collector Power Dissipation @ TC=25℃ | 50 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4.0A; IB= 0.8A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4.0A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V ; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.1A ; VCE= 10V |
| 3 |
| MHz |
COB | Output Capacitance | IE= 0 ; VCB= 10V;ftest= 1.0MHz |
| 165 |
| pF |
tf | Fall Time | ICP= 4A , IB1(end)= 0.8A |
| 0.5 | 1.0 | μs |
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号