是
ISC/ISCSEMI
T30F
放大
硅(Si)
NPN型
10(A)
80(W)
平面型
TO-220F
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·High DC Current Gain-
: hFE= 1000V(Min.) @IC= 3A
APPLICATIONS
·Switching for dynamotor excitation
·Audio, regulator and general purpose applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 300 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 10 | A |
IB | Base Current-Continuous | 1 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 30mA; IB= 0 | 300 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 500 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 6A; IB= 6mA |
|
| 2.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 6A; IB= 6mA |
|
| 3.0 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 100 | μA |
hFE | DC Current Gain | IC= 3A; VCE= 2V | 1000 |
|
|
|
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号