是
ISC
2SD113
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ： 
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·High Power Dissipation
·High Current Capability
APPLICATIONS
·Audio power amplifier, power switching applications.
·DC-DC converter and regulator applications.
SYMBOL | PARAMETER | MAX | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 10 | V |
IC | Collector Current-Continuous | 30 | A |
IE | Emitter Current-Continuous | -30 | A |
IB | Base Current-Continuous | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 200 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -65~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA; RBE=∞ | 80 |
| V | |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 50mA; IC= 0 | 10 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 15A; IB= 3A |
|
| 1.5 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 15A; IB= 3A |
|
| 2.5 | V |
ICBO | Collector Cutoff Current | VCB= 50V; IE= 0 |
|
| 2 | mA |
IEBO | Emitter Cutoff Current | VEB= 10V; IC= 0 |
|
| 50 | mA |
hFE-1 | DC Current Gain | IC= 1A; VCE= 5V | 50 |
| 300 |
|
hFE-2 | DC Current Gain | IC= 15A; VCE= 5V | 10 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= 50V; ftest= 1.0MHz |
| 400 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 10V |
| 1.5 |
| MHz |
u hFE-1Classifications
O | Y |
50-150 | 100-300 |
企业名：无锡固电半导体股份有限公司
类型：生产制造商
电话： 0510-85346300
手机：15961889150
联系人：潘小姐
QQ：
微信：
邮箱：mdc@iscsemi.com
地址：江苏无锡无锡新区新梅路68号
