| Manufacturer: | Fairchild Semiconductor | |
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| Product Category: | IGBT Transistors | |
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| RoHS: | ![RoHS Compliant]() Details | |
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| Collector- Emitter Voltage VCEO Max: | 600 V | |
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| Collector-Emitter Breakdown Voltage: | 600 V | |
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| Collector-Emitter Saturation Voltage: | 2.1 V | |
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| Maximum Gate Emitter Voltage: | 20 V | |
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| Continuous Collector Current Ic Max: | 40 A | |
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| Gate-Emitter Leakage Current: | +/- 100 nA | |
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