| Manufacturer: | Fairchild Semiconductor | |
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| RoHS: | ![RoHS Compliant by Exemption]() Details | |
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| Product: | General Purpose MOSFETs | |
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| Transistor Polarity: | N-Channel | |
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| Drain-Source Breakdown Voltage: | 200 V | |
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| Continuous Drain Current: | 9.5 A | |
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| Power Dissipation: | 38000 mW | |
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| Forward Transconductance gFS (Max / Min): | 5.5 S | |
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| Resistance Drain-Source RDS (on): | 0.36 Ohm @ 10 V | |
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| T*ical Turn-Off Delay Time: | 70 ns | |
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| Gate-Source Breakdown Voltage: | /- 30 V | |
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| Maximum Operating Temperature: | 150 C | |
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| Minimum Operating Temperature: | - 55 C | |
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