Manufacturer: | Fairchild Semiconductor | |
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Product Category: | IGBT Transistors | |
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RoHS: | Details | |
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Collector- Emitter Voltage VCEO Max: | 1200 V | |
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Collector-Emitter Breakdown Voltage: | 1200 V | |
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Collector-Emitter Saturation Voltage: | 2.1 V | |
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Maximum Gate Emitter Voltage: | 20 V | |
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Continuous Collector Current Ic Max: | 43 A | |
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Gate-Emitter Leakage Current: | /- 250 nA | |
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