供应135-175MHz,8w,12.5V射频放大模块RA08H1317M

型号/规格：
RA08H1317M
品牌/商标：
MITSUBISHI

供应135-175MHz,8w,12.5V射频放大模块RA08H1317M FEATURES• Enhancement-Mode MOSFET Transistors(IDD@0 @ VDD=12.5V, VGG=0V)• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW• hT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW• Broadband Frequency Range: 135-175MHz• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V• Module Size: 30 x 10 x 5.4 mm• Linear operation is possible by setting the quiescent draincurrent with the gate voltage and controlling the output powerwith the input power

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