双向可控硅晶闸管原装封装恩智浦NXP BT132-600D

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双向可控硅晶闸管原装封装恩智浦NXP BT132-600D

采用SOT78塑料封装的平面钝化敏感门极四象限三端

双向可控硅用于通用双向开关和相位控制应用。这种

超敏感门极“D系列”三端双向可控硅用于直接连接微

控制器、逻辑集成电路和其他低功耗门极触发电路。

特性和优势

直接连接逻辑电平IC

直接连接低功耗门极驱动器和微控制器

更强的电流浪涌耐受能力

高阻断电压能力

凭借平面钝化结构实现电压稳固性和可靠性

所有四个象限中的触发

超敏感门极

应用

空调室内风扇控制

电池供电的应用

通用开关和相位控制

SymbolParameterConditionsMinTyp/NomMaxUnitStatic characteristicsDynamic characteristics

V_DRM	repetitive peak off-state voltage			600	V
I_T(RMS)	RMS on-state current	full sine wave; T_lead ≤ 51 °C		1	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 20 ms		16	A
I_TSM	non-repetitive peak on-state current	full sine wave; T_j(init) = 25 °C; t_p = 16.7 ms		17.5	A
T_j	junction temperature			125	°C
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G+; T_j = 25 °C	2	5	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2+ G-; T_j = 25 °C	2.5	5	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2- G-; T_j = 25 °C	2.5	5	mA
I_GT	gate trigger current	V_D = 12 V; I_T = 0.1 A; T2- G+; T_j = 25 °C	5	10	mA
I_H	holding current	V_D = 12 V; T_j = 25 °C	1.2	10	mA
V_T	on-state voltage	I_T = 5 A; T_j = 25 °C	1.4	1.7	V
dV_D/dt	rate of rise of off-state voltage	V_DM = 402 V; T_j = 125 °C; (V_DM = 67% of V_DRM); exponential waveform; R_GT1(ext) = 1 kΩ	5