H5TQ4G63EFR-RDC  DDR3

4Gb DDR3 SDRAM

Lead-Free&Halogen-Free

(RoHS Compliant)

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA

 

 

H5TQ4G63EFR-RDC  DDR3的描述：

The H5TQ4G83EFR-xxC,H5TQ4G63EFR-xxC,are a 4,294,967,296-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.

SK Hynix 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.

While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it.

The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

 

 

 

分类：内存>内存芯片> DRAM芯片

 

ECRCN:EAR99

 

密度：1GBIT

 

类型：DDR3 SDRAM

 

组织：128MX16

 

数据总线宽度：8位

 

地址总线宽度：17位

工作温度：0°C ~   85°C

 

基本封装类型：球栅阵列

 

封装：BGA

 

封装描述：细间距球栅阵列

 

铅形状：Ball

 

引脚数：96

 

PCB：96

 

销距（mm）：0.8

 

MSL：N/A

 

Maximum Reflow Temperature（°C）：255-260

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