K4B2G0846F-BYMA 全新原装 DDE3

2Gb F-die DDR3L SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

 

K4B2G0846F-BYMA 全新原装 DDE3 的参数：

制造商	SAMSUNG
类别	DDR3L SDRAM
组织	256M x 8
RoHS	是
容量	2Gb F-die
封装 / 箱体	96FBGA
工作温度	0 ~ 85 °C

 

 

K4B2G0846F-BYMA 全新原装 DDE3 的描述：

The 2Gb DDR3 SDRAM F-die is organized as a 32Mbit x 8 I/Os x 8 banks device.

 

 This synchronous device achieves high speed double-data-rate transfer rates of up to 1866Mb/sec/pin (DDR3-1866) for general applications. The chip is designed to comply with the following key DDR3 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset .

 

All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style.

 

The DDR3 device operates with a single 1.35V(1.28V~1.45V) or 1.5V(1.425V~1.575V) power supply and 1.35V(1.28V~1.45V) or 1.5V(1.425V~1.575V) VDDQ.

The 2Gb DDR3 F-die device is available in 78balls FBGA(x8).

 

全新原包原装可含税（香港可交）

MT29F64G08CBABBWPR:B

KLMBG2JETD-B041

KLMAG1JETD-B041

KLM8G1GETF-B041

KLM4G1FETE-B041

K4E8E324EB-EGCF

K4E6E304EB-EGCF

K4E6E304EC-EGCG

K4B4G1646E-BCNB

K4A8G165WB-BCRC

MT52L512M32D2PF-107WT:B

MT52L256M32D1PF-107WT:B

MT41K64M16TW-107:J

MT41K64M16TW-107IT:J

MT41K512M8DA-107:P

MT41K256M16TW-107:P

MT41K256M16TW-107IT:P

MT41K256M16TW-107AIT:P

MT41K128M16JT-125:K

MT41K128M16JT-125IT:K

MT40A512M16LY-075:E

MT29F64G08CBABBWPR:B

MT29F4G08ABAEAWP:E

MT29F2G08ABAGAWP-IT:G

MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP:E

MT29F2G08ABAEAH4:E

MT29F2G01ABAGDWB-IT:G

MT53D512M64D4HR-053 WT:D

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