STP21N90K5
ST(意法半导体)
TO-220
无铅环保型
直插式
单件包装
: 299 mOhms
: 43 nC
: 900 V
: 18.5 A
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室
STP21N90K5
MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5
0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK
Features STP21N90K5
■ TO-220 worldwide best RDS(on)
■ Worldwide best FOM (figure of merit)
■ Ultra low gate charge
■ 100% avalanche tested
■ Zener-protected
Applications STP21N90K5
■ Switching applications
Description STP21N90K5
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 1 mA 900 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 900 V VDS = 900 V, Tc=125 °C 1 50 μA μA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 3 45V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 9 A 0.25 0.299 Ω
企业名:深圳市中立信电子科技有限公司
类型:贸易/代理/分销
电话:
0755-23956688
0755-23956688
手机:13410226883
联系人:叶先生/王先生
邮箱:Lee@zlxele.com
地址:广东深圳深圳市福田区彩田路彩虹新都大厦彩荟阁7A室