Avago Technologies’ MGA-30116 is a high linearity ? Watt PA with good OIP3 performance and exceptionally good PAE at p1dB gain compression point, achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. The adjustable temperature compensated internal bias circuit allowed the device to be operated at either class A or class AB operation The MGA-30116 is housed inside a standard 16 pin QFN 3X3 package. Applications ? Class A driver amplifi er for GSM/CDMA Base Stations. ? General purpose gain block. Component Image 16 pins QFN 3x3 Notes: Package marking provides orientation and identifi cation “30116” = Device Part Number “YYWW” = Work Week and Year of manufacture “XXXX” = Last 4 digit of Lot number Features ? High linearity and P1dB ? Built in adjustable temperature compensated internal bias circuitry ? GaAs E-pHEMT Technology [1] ? Standard QFN 3X3 package ? 5V supply ? Excellent uniformity in product specifi cations ? Tape-and-Reel packaging option available ? MSL-1 and Lead-free ? High MTTF for base station application Specifi cations 900MHz; 5V, 202.8mA (typical) ? 17.0 dB Gain ? 44.1 dBm Output IP3 ? 27.7 dBm Output Power at 1dB gain compression ? 47.0% PAE at P1dB ? 2.0 dB Noise Figure Notes: 1. Enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices

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