NPN型
贴片型
S9014 J6 SOT-23
点接触型
长电
硅(Si)
塑料封装
放大
企业名：东莞市福日电子有限公司
类型：生产加工
电话： 0769-85388861
联系人：陈聚仁
地址：广东东莞长安镇上沙S358省道旁明和电子广场B区312号
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SOT-23 Plastic-Encapsulate Transistors
S9014 TRANSISTOR (NPN)
FEATUR*
z Complementary to S9015
MARKING: J6
MAXIMUM RATINGS (TA=25℃unless otherwise noted)
SOT-23
1. BASE
2. EMITTER
3. COLLE*OR
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 50 | V |
VCEO | Collector-Emitter Voltage | 45 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 0.1 | A |
PC | Collector Power Dissipation | 0.2 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter |
Symbol |
Test conditions |
MIN |
TYP |
MAX |
UNIT |
Collector-base breakdown voltage |
V(BR)CBO |
IC= 100μA, IE=0 |
50 |
|
|
V |
Collector-emitter breakdown voltage |
V(BR)CEO |
IC= 0.1mA, IB=0 |
45 |
|
|
V |
Emitter-base breakdown voltage |
V(BR)EBO |
IE=100μA, IC=0 |
5 |
|
|
V |
Collector cut-off current |
ICBO |
VCB=50 V , IE=0 |
|
|
0.1 | μA |
Collector cut-off current |
ICEO |
VCE=35V , IB=0 |
|
|
0.1 | μA |
Emitter cut-off current |
IEBO |
VEB= 3V , IC=0 |
|
|
0.1 | μA |
DC current gain |
hFE |
VCE=5V, IC= 1mA |
200 |
|
1000 |
|
Collector-emitter saturation voltage |
VCE(sat) |
IC=100 mA, IB= 5mA |
|
|
0.3 |
V |
Base-emitter saturation voltage |
VBE(sat) |
IC=100 mA, IB= 5mA |
|
|
1 |
V |
Transition frequency |
fT |
VCE=5V, IC= 10mA f=30MHz |
150 |
|
|
MHz |
CLASSIFICATION OF hFE
Rank | L | H |
Range | 200-450 | 450-1000 |
Typical Characteristics S9014
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友情链接： 深圳市元东发电子有限公司
