NPN型
贴片型
9013 J3
点接触型
长电
硅(Si)
塑料封装
放大
企业名：东莞市福日电子有限公司
类型：生产加工
电话： 0769-85388861
联系人：陈聚仁
地址：广东东莞长安镇上沙S358省道旁明和电子广场B区312号
SOT-23 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
FEATUR*
z Complementary to S9012
z Excellent hFElinearity
MARKING: J3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
SOT-23
1. BASE
|
2. EMITTER
3. COLLE*OR
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 40 | V |
VCEO | Collector-Emitter Voltage | 25 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 500 | mA |
PC | Collector Power Dissipation | 300 | mW |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | IC= 100μA,IE=0 | 40 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA,IB=0 | 25 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA, IC=0 | 5 |
|
| V |
Collector cut-off current | ICBO | VCB=40V, IE=0 |
|
| 0.1 | μA |
Collector cut-off current | ICEO | VCE=20V, IB=0 |
|
| 0.1 | μA |
Emitter cut-off current | IEBO | VEB= 5V, IC=0 |
|
| 0.1 | μA |
DC current gain | hFE(1) | VCE=1V, IC= 50mA | 120 |
| 400 |
|
hFE(2) | VCE=1V, IC=500mA | 40 |
|
|
| |
Collector-emitter saturation voltage | VCE(sat) | IC=500mA, IB= 50mA |
|
| 0.6 | V |
Base-emitter saturation voltage | VBE(sat) | IC=500mA, IB= 50mA |
|
| 1.2 | V |
Transition frequency |
fT | VCE=6V, IC= 20mA f=30MHz |
150 |
|
|
MHz |
CLASSIFICATION OF hFE(1)
Rank | L | H | J |
Range | 120-200 | 200-350 | 300-400 |
Typical Characteristics S9013
友情链接： 深圳市元东发电子有限公司
