NPN型
贴片型
S8050 J3Y SOT-23
点接触型
长电
硅(Si)
塑料封装
放大
企业名：东莞市福日电子有限公司
类型：生产加工
电话： 0769-85388861
联系人：陈聚仁
地址：广东东莞长安镇上沙S358省道旁明和电子广场B区312号
|
SOT-23 Plastic-Encapsulate Transistors
S8050 TRANSISTOR (NPN)
FEATUR*
z Complimentary to S8550
z Collector Current: IC=0.5A
MARKING: J3Y
MAXIMUM RATINGS (TA=25℃unless otherwise noted)
SOT-23
|
1. BASE
2. EMITTER
3. COLLE*OR
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 40 | V |
VCEO | Collector-Emitter Voltage | 25 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 0.5 | A |
PC | Collector Dissipation | 0.3 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)
Parameter |
Symbol |
Test conditions |
MIN |
TYP |
MAX |
UNIT |
Collector-base breakdown voltage |
V(BR)CBO |
IC= 100μA, IE=0 |
40 |
|
|
V |
Collector-emitter breakdown voltage |
V(BR)CEO |
IC=1mA, IB=0 |
25 |
|
|
V |
Emitter-base breakdown voltage |
V(BR)EBO |
IE=100μA, IC=0 |
5 |
|
|
V |
Collector cut-off current |
ICBO |
VCB=40 V , IE=0 |
|
|
0.1 |
μA |
Collector cut-off current |
ICEO |
VCB=20V , IE=0 |
|
|
0.1 |
μA |
Emitter cut-off current |
IEBO |
VEB= 5V , IC=0 |
|
|
0.1 |
μA |
DC current gain |
HFE(1) |
VCE=1V, IC= 50mA |
120 |
|
350 |
|
HFE(2) |
VCE=1V, IC= 500mA |
50 |
|
|
| |
Collector-emitter saturation voltage |
VCE(sat) |
IC=500 mA, IB= 50mA |
|
|
0.6 |
V |
Base-emitter saturation voltage |
VBE(sat) |
IC=500 mA, IB= 50mA |
|
|
1.2 |
V |
Transition frequency |
fT | VCE=6V, IC= 20mA f=30MHz |
150 |
|
|
MHz |
CLASSIFICATION OF hFE(1)
Rank | L | H |
Range | 120-200 | 200-350 |
Typical Characteristics S8050
友情链接： 深圳市元东发电子有限公司
