小功率
点接触型
硅(Si)
变频
放大
代理
NPN型
贴片型
S9015 M6 DOT-23
长电
塑料封装
企业名:东莞市福日电子有限公司
类型:生产加工
电话: 0769-85388861
联系人:陈聚仁
地址:广东东莞长安镇上沙S358省道旁明和电子广场B区312号
|
S9015 TRANSISTOR (PNP)
FEATUR*
z Complementary to S9014
MARKING: M6
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
SOT-23
|
2. EMITTER
3. COLLE*OR
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | -50 | V |
VCEO | Collector-Emitter Voltage | -45 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current -Continuous | -0.1 | A |
PC | Collector Power Dissipation | 0.2 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter |
Symbol |
Test conditions |
MIN |
TYP |
MAX |
UNIT |
Collector-base breakdown voltage |
V(BR)CBO |
IC= -100μA, IE=0 |
-50 |
|
|
V |
Collector-emitter breakdown voltage |
V(BR)CEO |
IC= -0.1mA, IB=0 |
-45 |
|
|
V |
Emitter-base breakdown voltage |
V(BR)EBO |
IE=-100μA, IC=0 |
-5 |
|
|
V |
Collector cut-off current |
ICBO |
VCB=-50 V, IE=0 |
|
|
-0.1 |
μA |
Emitter cut-off current |
IEBO |
VEB= -5V, IC=0 |
|
|
-0.1 |
μA |
DC current gain |
hFE |
VCE=-5V, IC= -1mA |
200 |
|
1000 |
|
Collector-emitter saturation voltage |
VCE(sat) |
IC=-100mA, IB= -10mA |
|
|
-0.3 |
V |
Base-emitter saturation voltage |
VBE(sat) |
IC=-100mA, IB=-10mA |
|
|
-1 |
V |
Transition frequency |
fT |
VCE=-5V, IC= -10mA f=30MHz |
150 |
|
|
MHz |
CLASSIFICATION OF hFE
Rank | L | H |
Range | 200-450 | 450-1000 |
Typical Characteristics S9015
友情链接: 深圳市元东发电子有限公司