型号：IS42S32160F-7BLI

品牌：ISSI

封装：BGA90

数量：3000

The 512Mb SDRAM is a high speed CMOS, dynamic

random-accessmemorydesignedtooperateineither3.3V

Vdd/Vddq or 2.5V Vdd/Vddq memory systems, depending

on the DRAM option. Internally configured as a quad-bank

DRAM with a synchronous interface.

The 512Mb SDRAM (536,870,912 bits) includes an AUTO

REFRESH MODE, and a power-saving, power-down

mode. All signals are registered on the positive edge of

the clock signal, CLK. All inputs and outputs are LVTTL

compatible.

The 512Mb SDRAM has the ability to synchronously burst

data at a high data rate with automatic column-address

generation, the ability to interleave between internal banks

to hide precharge time and the capability to randomly

change column addresses on each clock cycle during

burst access.

A self-timed row precharge initiated at the end of the burst  

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