H1061
? PMC Components Pte Ltd. , Singapore, 2000
TRIPLE DIFFUSED SILICON NPN TRANSISTOR

… designed for low frequency power amplifier

MAXIMUM RATINGS
Characteristic Symbol Value Unit
Collector Base Voltage VCBO 100 V
Collector Emitter Voltage VCEO 80 V
Emitter Base Voltage VEBO 5 V
Collector Current (DC) IC 4 A
Collector Current (Peak) IC 8 A
Collector power Dissipation PC 40 W
Junction Temperature TJ 150 °C
Storage Temperature Tstg -55~150 °C

ELE*RICAL CHARA*ERISTICS
Characteristic Symbol Test Condition Min. T*. Max. Unit
Collector Cut Off Current ICBO VCB = 80V, IE = 0A - - 100 μA
Collector – Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0A 80 - - V
DC Current Gain hFE VCE = 4V, IC = 1A
VCE = 4V, IC = 0.1A
60
35
-
-
200
-
-
-
Collector Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 0.2A - - 1 V
Base Emitter Voltage VBE VCE = 4V, IC = 1A - - 1.5 V
Transition Frequency fT VCE = 5V, IC = 0.5A - 10 - MHz
Collector Out put Capacitance Cob VCB = 20V, IE = 0A, f=1MHz - 40 - P

Cl*ification of hFE
Rank           B                  C
Range       60 to 120     100-200