FAIRCHILD/*童
FQA11N90C
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
900(V)
23(pF)
2(dB)
11000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
FQA11N90C_F109
900V N-Channel MOSFET
Features
• 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
• Low gate charge ( t*ical 60 nC)
• Low Crss ( t*ical 23pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
*ology.
友情链接: 深圳市元东发电子有限公司