FAIRCHILD/*童
FQA160N08
*缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
N-FET硅N沟道
10(V)
80(V)
530(pF)
2(dB)
160000(mA)
企业名:陈培忠
类型:经销商
电话: 0755-84746465
联系人:陈培忠
地址:广东深圳福田区现代国际大厦
∟ 整流二极管(5)∟ 快/超快/特快恢复二极管(18)
FQA160N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 160A, 80V, RDS(on) = 0.007Ω @VGS = 10 V
• Low gate charge ( t*ical 220 nC)
• Low Crss ( t*ical 530 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
友情链接: 深圳市元东发电子有限公司