BlueRocket/蓝箭电子 BRCS100N06BD N沟道TO-263塑封封装场效应管

Descriptions

BRCS100N06BD N-CHANNEL MOSFET in a TO-263 Plastic Package.

Electrical Characteristics(Ta=25℃)

● Drain-Source Breakdown Voltage: 60V
● Zero Gate Voltage Drain Current
VDS=60V VGS=0V: 1μA
VDS=60V VGS=0V TJ=125℃: 10μA
● Gate-Body leakage current: ±100nA
● Gate Threshold Voltage: 2V 2.6V 4V
● Static Drain-Source On-Resistance: 5.9~7mΩ
● Diode Forward Voltage: 0.6~1.2V
● Input Capacitance: 4920pF
● Output Capacitance: 295pF
● Reverse Transfer Capacitance: 133pF
● Gate resistance: 1.2Ω
● Total Gate Charge: 53~75nC
● Total Gate Charge (4.5V): 22~31nC
● Gate Source Charge: 17nC
● Gate Drain Charge:  5nC
● Turn-On DelayTime: 18ns
● Turn-On Rise Time: 20ns
● Turn-Off DelayTime: 33ns
● Turn-Off Fall Time: 4ns

BRCS100N06BD产品规格书

企业名：深圳市科瑞芯电子有限公司

类型：贸易/代理/分销

电话： 0755-21001680
0755-82170220

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13925219291

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