ST/意法
STF2HNK60ZFP
*缘栅(MOSFET)
N沟道
耗尽型
MOS-HBM/半桥组件
CER-DIP/陶瓷直插
M*金属半导体
企业名:深圳市众翔辉电子科技有限公司
类型:经销商
电话: 0755-82992949
联系人:程正华
地址:广东深圳深圳市福田区福建大厦B座1203室
TYPICAL RDS(on) = 4.4Ω
EXTREMELY HIGH dv/dt CAPABILITY
*D IMPROVED CAPABILITY
100% *ALANCHE T*TED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
D*CRIPTION
The SuperM*H™ series is obtained through an
extreme optimization of ST’s well established stripbased
PowerM*H™ layout. In addition to pushing
on-resistance significantly down, special care is taken
to ensure a very good dv/dt capability for the
most demanding applications. Such series complements
ST full range of high voltage MOSFETs including
revolutionary MDmesh™ products.
友情链接: 深圳市元东发电子有限公司