供应2N6796 8A,100V Single N-Ch Hi-Rel MOS管

8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET
The 2N6796 is an N-Channel enhancement mode silicon
gate power field effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated circuits.

Features
• 8A, 100V
• r
DS(ON)
= 0.180
Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

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