SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

500

V

V_CEO

Collector-Emitter Voltage

400

V

V_EBO

Emitter-Base Voltage

10

V

I_C

Collector Current-Continuous  

12

A

I_CM

Collector Current-Peak  

24

A

I_B

Base Current-Continuous  

4

A

P_C

Collector Power Dissipation

@T_C=25℃

100

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA; I_B= 0

400

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 7A; I_B= 1.4A

0.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 7A; I_B= 1.4A

1.3

V

I_CBO

Collector Cutoff Current

V_CB= 500V; I_E= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 10V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 7A; V_CE= 4V

10

30

C_OB

Output Capacitance

I_E= 0; V_CB= 10V; f= 1MHz

105

pF

f_T

Current-Gain—Bandwidth Product

I_E= -1A; V_CE= 12V

10

MHz

Switching Times

t_on

Turn-On Time

I_C= 7A; I_B1= 0.7A; I_B2= -1.4A;

V_CC= 200V; R_L= 28.5Ω

1.0

μs

t_stg

Storage Time

3.0

μs

t_f

Fall Time

0.5

μs