无锡固电ISC供应MJE13007晶体管

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供应MJE13007三*管,TO-220,有意者请联系！

D*CRIPTION

·Collector–Emitter Sustaining Voltage

: V_CEO(SUS)= 400V(Min.)

·Collector Saturation Voltage

: V_CE(sat)= 2.0(Max) @ I_C= 5.0A

·Switching Time

: t_f= 0.9μs(Max.)@ I_C= 5.0A

APPLICATIONS

·Designed for use in high-voltage, high-speed, power swit-

ching in inductive circuit, they are particularly suited for

115 and 220V switchmode applications such as switching

regulators,inverters,Motor controls,Solenoid/Relay drivers

and deflection circuits.

*SYOL**	PARAMETER	VALUE	UNIT
V_CEV	Collector-Emitter Voltage	700	V
V_CEO	Collector-Emitter Voltage	400	V
V_EBO	Emitter-Base Voltage	9	V
I_C	Collector Current-Continuous	8	A
I_CM	Collector Current-peak	16	A
I_B	Base Current	4	A
I_BM	Base Current-Peak	8	A
I_E	Emitter Current	12	A
I_EM	Emitter Current-Peak	24	A
P_C	Collector Power Dissipation T_C=25℃	80	W
T_i	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 10mA; I_B= 0	400			V
V_CE_(sat)-1	Collector-Emitter Saturation Voltage	I_C= 2A ;I_B= 0.4A			1.0	V
V_CE_(sat)-2	Collector-Emitter Saturation Voltage	I_C= 5A ;I_B= 1A T_C= 100℃			2.0 3.0	V
V_CE_(sat)-3	Collector-Emitter Saturation Voltage	I_C= 8A ;I_B= 2A			3.0	V
V_BE_(sat)-1	Base-Emitter Saturation Voltage	I_C= 2A ;I_B= 0.4A			1.2	V
V_BE_(sat)-2	Base-Emitter Saturation Voltage	I_C= 5A ;I_B= 1A T_C= 100℃			1.6 1.5	V
I_C*	Collector Cutoff Current	V_C*= 700V_;V_BE(off)= 1.5V T_C= 125℃			0.1 1.0	mA
I_EBO	Emitter Cutoff Current	V_EB= 9V; I_C= 0			0.1	mA
h_FE-1	DC Current Gain	I_C= 2A; V_CE= 5V	8		40
h_FE-2	DC Current Gain	I_C= 5A; V_CE= 5V	5		30
f_T	Current-Gain—Bandwidth Product	I_C= 0.5 A; V_CE= 10V;	4			MHz
C_OB	Output Capacitance	I_E= 0; V_CB= 10V; f_test= 0.1MHz		80		pF
Switching Times; Resistive Load
t_d	Storage Time	I_C= 5A; V_CC= 125V; I_B1= I_B2= 1A; t_p= 25μs; Duty Cycle≤1%			0.1	μs
t_r	Fall Time				1.5	μs
t_s	Storage Time				3.0	μs
t_f	Fall Time				0.7	μs