是
ISC
2SC4981
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号
∟ 功率三极管(87)∟ 开关三极管(2)∟ 低噪声三极管(74)∟ 复合(达林顿)三极管(6)∟ 其他三极管(3)
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
·Collector Current-IC= 7A(Max.)
·Low Collector Saturation Voltage
:VCE(sat)= 0.3V(Max.)@ IC= 3.5A
APPLICATIONS
·Designed for use in drivers such as DC/DC converters
and actuators.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 100 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 7 | A |
ICM | Collector Current-Peak | 14 | A |
IB | Base Current-Continuous | 1.5 | A |
IBM | Base Current-Peak | 2 | A |
PT | Total Power Dissipation @ TC=25℃ | 25 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 5 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0 | 80 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 3.5A; IB= 0.2A |
|
| 0.3 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 3.5A; IB= 0.2A |
|
| 1.2 | V |
ICBO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
ICEO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | At rated Voltage |
|
| 100 | μA |
hFE | DC Current Gain | IC= 3.5A ; VCE= 2V | 70 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.7A ; VCE= 10V |
| 50 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 3.5A, IB1= 0.35A; IB2= -0.35A; RL= 8Ω; VBB2= 4V |
|
| 0.3 | μs |
tstg | Storage Time |
|
| 1.5 | μs | |
tf | Fall Time |
|
| 0.2 | μs |
企业名:无锡固电半导体股份有限公司
类型:生产制造商
电话: 0510-85346300
手机:15961889150
联系人:潘小姐
微信:
邮箱:mdc@iscsemi.com
地址:江苏无锡无锡新区新梅路68号