NXP/恩智浦
BT139
双向
三*
塑料封装
TO-220
高频(快速)
带散热片
低频
*率
16（A）
1-100（mA）
企业名：深圳市杰宝莱科技发展有限公司
类型：生产加工
电话： 755-83769918
联系人：罗海平
地址：广东深圳福田区红荔路群星广场B907室
公司中文域名：杰宝莱
公司网络实名：中国可控硅批发商 贴片可控硅
公司主页：https://jbl-sz.com
阿里巴巴网站：https://jepoler.cn.alibaba.com
https://jblchj.cn.alibaba.com
SY*OL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VDRM | Repetitive peak off-state voltages |
| - | -500 5001 | -600 6001 | -800 800 | V |
IT(RMS)ITSM | RMS on-state current Non-repetitive peak | full sine wave; Tmb £99 °C full sine wave; Tj= 25 °C prior to | - | 16 | A | ||
| on-state current | surge |
|
|
| ||
|
| t = 20 ms | - | 140 | A | ||
|
| t = 16.7 ms | - | 150 | A | ||
I2t | I2t for fusing | t = 10 ms | - | 98 | A2s | ||
dIT/dt | Repetitive rate of rise of | ITM= 20 A; IG= 0.2 A; |
|
|
| ||
| on-state current after | dIG/dt = 0.2 A/ms |
|
|
| ||
| triggering | T2 G | - | 50 | A/ms | ||
|
| T2 G-T2- G- | -- | 50 50 | A/ms A/ms | ||
|
| T2- G | - | 10 | A/ms | ||
IGM | Peak gate current |
| - | 2 | A | ||
VGM | Peak gate voltage |
| - | 5 | V | ||
PGM | Peak gate power |
| - | 5 | W | ||
PG(*)TstgTj | Average gate power Storage temperature Operating junction | over any 20 ms period | --40 - | 0. | W °C °C | ||
| temperature |
|
|
|
| ||
友情链接： 深圳市元东发电子有限公司
