SILAN/士兰微
4N60
*缘栅(MOSFET)
P沟道
增强型
MW/微波
CER-DIP/陶瓷直插
GE-P-FET锗P沟道
650(V)
650(V)
4(μS)
PS(pF)
企业名:杭州松三电子有限公司
类型:生产加工
电话: 0571-88256246
联系人:于群
地址:浙江杭州杭州市拱墅区 QQ1179198635
供应UTC 仕兰微 品牌充电器,电源*mos管。
封装:TO-251(DIP) ; TO-252(SMD
1、TO-251小插件封装。80PCS/管。1N60 2N60 3N60 4N60
2.TO-252贴片1N60 2N60 3N60 4N60
1 Amps, 600/650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATUR*
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
2、韩产*MOS管。
3、现货*供应。珠三角支持快递代收,*支持支付宝。
1、TO-251小插件封装。80PCS/管。
1 Amps, 600/650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATUR*
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
2、韩产*MOS管芯片。
3、现货*供应。珠三角支持快递代收,*支持支付宝。
友情链接: 深圳市元东发电子有限公司