| 品牌/商标 | 台产 | 型号/规格 | HS70N06PA |
| 种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 增强型 | 材料 | N-FET硅N沟道 |
1，70 Amps,60 Volts N-CHANNEL POWER MOSFET。
2，现货*供货稳定，*，适合于国产中高端设备。
3,实际价格请垂询我们的业务人员
1.Description
The HS70N06 is three-terminal silicon device with current conduction capability of about
70A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold
voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching
2. Features
RDS(ON)=15mΩ@VGS=10V.
Ultra low gate charge (t*ical 90nC)
Low reverse transfer capacitance
Fast switching capability
100％ avalanche energy specified
Improved dv/dt capability
友情链接： 深圳市元东发电子有限公司
