品牌:Truesemi 型号:TSP730M 种类:*缘栅(MOSFET) 沟道类型:N沟道 导电方式:增强型 材料:N-FET硅N沟道
1、韩系*场效应管。TO-220铁头封装，1K/盒。
2、现货*供应稳定。
5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
D*CRIPTION
The N-Channel enhancement mode silicon gate power MOSFET
is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
FEATUR*
* RDS(ON) =1Ω@VGS= 10 V
* Avalanche energy specified
* Rugged - SOA is power dissipation limited
* Fast switching capability
* Linear transfer characteristics
* High input impedance
友情链接： 深圳市元东发电子有限公司
