| 品牌：ST/意法 | 型号：ST2303 | 种类：*缘栅(MOSFET) |
| 沟道类型：N沟道 | 导电方式：增强型 | 封装外形：SMD(SO)/表面封装 |
| 开启电压：30（V） | 夹断电压：20（V） | 跨导：-（μS） |
| *间电容：`（pF） | 低频噪声系数：`（dB） | *大漏*电流：`（mA） |
| *大耗散功率：`（mW） |
P Channel Enchancement Mode MOSFET ST2303
-1.7A
D*CRIPTION
The ST2303 is the P-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outine surface mount package.
FEATURE
z -30V/-2.6A, RDS(ON) = 130m-ohm
@VGS = -10V
z -30V/-2.0A, RDS(ON) = 180m-ohm
@VGS = -4.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design
友情链接： 深圳市元东发电子有限公司
