| 是否提供加工定制：是 | 品牌：NEC/日本电气 | 型号：2SC3357 |
| 应用范围：放大 | *性：NPN型 | 集电**大允许电流ICM：0.1（A） |
| 集电**大耗散功率PCM：1（W） | 截止频率fT：6.5（MHz） | 结构：点接触型 |
| 封装形式：贴片型 | 封装材料：塑料封装 |
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
D*CRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic
FEATUR*
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
• Large PT in Small Package
PT : 2 W with 16 cm2 ´ 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT* 1.2 W
Thermal Resistance Rth(j-a)* 62.5 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to +150 °C
* mounted on 16 cm2 ´ 0.7 mm Ceramic Substrate
友情链接： 深圳市元东发电子有限公司
