是否提供加工定制:是 | 品牌:TXF | 型号:2N5551 |
应用范围:放大 | 材料:硅(Si) | 集电**大允许电流ICM:0.6(A) |
集电**大耗散功率PCM:0.625(W) | 截止频率fT:100(MHz) | 结构:平面型 |
封装形式:TO-92 | 封装材料:塑料封装 |
2N5551
NPN General Purpose Amplifier
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
*T*:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 600 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5551 *M*T5551
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
友情链接: 深圳市元东发电子有限公司