S9014M TRANSISTOR
D*CRIPTION
NPN Epitaxial Silicon Transistor
FEATUR*
High hFE and good linearity
Complementary to S9015M
APPLICATION
Pre-Amplifier, Low Level & Low Noise
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J6

MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.1 A
PC Collector Dissipation 0.15 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELE*RICAL CHARA*ERISTICS(Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA
Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 μA
DC current gain hFE VCE=5V, IC= 1mA
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V
Transition frequency fT
VCE=5V, IC= 10mA 150 MHz
Collector output capacitance Cobo VCB=10V,IE=0,f=1MHz 3.5 pF
Noise figure NF VCE=5V,Ic=0.2mA, 6 dB

企业名：深圳市泰兴发电子有限公司

类型：生产加工

电话： 0755-82533222

联系人：许惠谦

地址：广东深圳福田区华强北路华强广场Q2C042室