2SC1815

Audio Frequency Amplifier & High
Frequency OSC
• Complement to KSA1015
• Collector-Base Voltage : VCBO= 50V

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Cl*ification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 150 mA
IB Base Current 50 mA
PC Collector Power Dissipation 400 mW
TJ Junction Temperature 125 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. T*. Max. Units
ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 μA
IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 μA
hFE1
hFE2
DC Current Gain VCE=6V, IC=2mA
VCE=6V, IC=150mA
70
25
700
VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V
VBE (sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 1.0 V
fT Current Gain Bandwidth Product VCE=10V, IC=1mA 80 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 2.0 3.0 pF
NF Noise Figure VCE=6V, IC=0.1mA
RS=10kΩ, f=1Hz
1.0 1.0 dB
Cl*ification O Y GR L
hFE1 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700