2N5401

PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages. Sourced from Process 74.
2N5401 M*T5401
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
*T*:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 150 V
VCBO Collector-Base Voltage 160 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol Characteristic Max Units
2N5401 *M*T5401
PD Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
RqJC Thermal Resistance, Junction to Case 83.3 °C/W
RqJA Thermal Resistance, Junction to Ambient 200 357 °C/W