S9012M TRANSISTOR
D*CRIPTION
PNP Epitaxial Silicon Transistor
FEATUR*
Complementary to S9013M
Excellent hFE linearity
APPLICATION
150mW Output Amplifier of Potable Radios in Cl*
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)

MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELE*RICAL CHARA*ERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V
Collector cut-off current ICBO VCB=-40 V ,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V ,IB=0 -0.1 μA
Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μA
DC current gain hFE VCE=-1V, IC=-50mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V
Transition frequency fT
VCE=-6V, IC= -20mA
f=30MHz
150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 5 pF