S9018M TRANSISTOR
D*CRIPTION
NPN Epitaxial Silicon Transistor
FEATUR*
High Current Gain Bandwidth Product fT=1.1 GHz (T*)
APPLICATION
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)

MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 50 mA
PC Collector Dissipation 150 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
ELE*RICAL CHARA*ERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V
Collector cut-off current ICBO VCB=12V, IE=0 0.05 μA
Collector cut-off current ICEO VCE=12V, IB=0 0.1 μA
Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 μA
DC current gain hFE VCE=5V, IC= 1mA 70 190
Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=10mA, IB= 1mA 1.4 V
Transition frequency fT
VCE=5V, IC= 5mA
f=400MHz
MHz
Collector output capacitance Cobo VCB=10V,IE=0,f=1MHz 2 pF